Product Family: 1200V

1200V Silicon Carbide (SiC) MOSFET bare die feature low RDS(on) properties with a higher level of temperature independency versus Silicon. The SiC die construction enables higher power density per mm2 and consequentially smaller more rugged chips which can be driven faster & harder versus Silicon.
Please select a product from the list below:

Available Products:


  • SiS1200M2016
    1200 Volt 140 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200M2040
    1200 Volt 55 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200M2080
    1200 Volt 41 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200M2160
    1200 Volt 17 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach. Small die size for high integration.