Please select a product from the list below:
Available Products:
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SiS1200M2016
1200 Volt 140 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M2040
1200 Volt 55 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M2080
1200 Volt 41 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M2160
1200 Volt 17 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach. Small die size for high integration.
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SiS1200M3016
1200 Volt 120 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M3025
1200 Volt 77 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M3030
1200 Volt 65 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
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SiS1200M3040
1200 Volt 65 Amp Silicon Carbide MOSFET specified at ≥ 175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.