Product Family: NPN RF Bipolar Transistor


Typically used in Communication and instrumentation applications these RF transistors present smallest form factor and offer lowest capacitance potential by removing the package.
Please select a product from the list below:

Available Products:


  • BFQ65   This Silicon wideband NPN 7.5GHz transistor is suited for antenna and amplifier applications in the VHF and UHF frequency ranges.
  • BFR90   This NPN RF transistor is specially suited for wideband antenna amplifiers up to the GHz range. PNP complement BFQ51. Closest PNP complement BFT92.
  • BFR90A   This Silicon NPN RF transistor is designed primarily for use in high-gain, low-noise, small-signal amplifiers. Also used in applications that require fast switching times. PNP complement is BFQ51.
  • BFR91   This Silicon NPN RF transistor is designed primarily for use in high-gain, low-noise, small-signal amplifiers. Also used in applications that require fast switching times. PNP complement is BFT92
  • BFR91A   This Silicon RF amplifier is suited up to GHz range specially suited for wideband antenna amplifiers. PNP complement is BFT92
  • BFR92   This Silicon NPN RF transistor is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. PNP complement is BFT92
  • BFR92A   Designed for use in RF amplifiers, mixers and oscillators up to 1 GHz, this Silicon NPN RF transistor features low noise and high power gain. PNP complement is BFT92.
  • BFR93   NPN transistor suited for RF widebands amplifiers and oscillators. PNP complement is BFT93.
  • BFR93A   NPN transistor suited for RF widebands amplifiers and oscillators. PNP complement is BFT93.
  • 2SC3356   7 GHz NPN RF transistor for Microwave Low-Noise Amplification with high transition frequency and high collector current capabilities.
  • 2SC5635   NPN RF transistor designed for high frequency amplifiers and low voltage operation.
  • BFR391   This NPN transistor is primarily intended for use in RF wideband amplifiers. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency.
  • MPSH10   MPSH10 bare die suits use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode, and in low frequency drift, high output UHF oscillators. PNP complement is MPSH81
  • SiSH10   This NPN 1 GHz general purpose switching transistor bare die improves on the industry standard MPSH10 or MMBTH10 with higher minimum current gain and lower saturation voltage.