Product Family: 650V

650V Silicon Carbide (SiC) Schottky diodes in bare die form enable high power density. Combining Schottky diode structure with the properties of SiC wafer significantly increases chip ruggedness & system reliability. Higher switching speeds with lower cooling requirements can be realized.
Please select a product from the list below:

Available Products:


  • SiS650S03AS
    650 Volt 3 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S06AS
    650 Volt 6 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S08AS
    650 Volt 8 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S10AS
    650 Volt 10 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S15AS
    650 Volt 15 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S20AS
    650 Volt 20 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S30AS
    650 Volt 30 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S35AS
    650 Volt 35 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS650S50AS
    650 Volt 50 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.