Product Family: 1200V

1200V Silicon Carbide (SiC) Schottky diode bare die provide smaller chip sizes for a given power rating versus equivalent Silicon diodes. Rugged due to their construction material, they can operate reliably at higher frequency & higher junction temperatures and with high surge resilience.
Please select a product from the list below:

Available Products:


  • SiS1200S02AS
    1200 Volt 30 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S05AS
    1200 Volt 2 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S08AS
    1200 Volt 5 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S10AS
    1200 Volt 8 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S15AS
    1200 Volt 10 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S20AS
    1200 Volt 15 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • SiS1200S30AS
    1200 Volt 20 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.